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3D Integration of Resistive Switching Memory

3D Integration of Resistive Switching Memory

by Qing Luo
Hardback
Publication Date: 13/04/2023

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This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures, to its applications.

Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts:
1: Associative Problems in Crossbar array and 3D architectures;
2: Selector Devices and Self-selective cells;
3: Integration of 3D RRAM;
4: Reliability Issues in 3D RRAM;
5: Applications of 3D RRAM Beyond Storage.

The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.
ISBN:
9781032489438
9781032489438
Category:
Storage media & peripherals
Format:
Hardback
Publication Date:
13-04-2023
Publisher:
Taylor & Francis Ltd
Country of origin:
United Kingdom
Pages:
98
Dimensions (mm):
216x138mm
Weight:
0.24kg

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