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Microwave Metal Semiconductor Field Effect Transistors and High Electron Mobility Transistors

Microwave Metal Semiconductor Field Effect Transistors and High Electron Mobility Transistors

by J.Michael Golio
Hardback
Publication Date: 01/02/1991

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This book takes the reader from the basic operating principles of the microwave MESFET and HEMT to the application of device models in modern CAD programmes. In addition to explaining device operation and modelling, the book provides detailed specific algorithms which can be used to efficiently determine the parameters needed to utilize the available device models. Detailed comparisons of MESFET and HEMT performance are presented, and ultimate limitations to these devices are discussed. This book is designed for microwave device and circuit design engineers, GaAs device and MMIC design engineers, MMIC and Hybrid circuit design engineers, and researchers in large signal device modelling.
ISBN:
9780890064269
9780890064269
Category:
Computer-aided design (CAD)
Format:
Hardback
Publication Date:
01-02-1991
Publisher:
Artech House Publishers
Country of origin:
United States
Pages:
368
Dimensions (mm):
229x152x23mm
Weight:
0.71kg

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