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Si Detectors and Characterization for HEP and Photon Science Experiment

Si Detectors and Characterization for HEP and Photon Science Experiment

How to Design Detectors by TCAD Simulation

by Ajay Kumar Srivastava
Paperback
Publication Date: 25/09/2020

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Development OF Si DETECTORS FOR THE CMS LHC Experiments.- Physics and Technology of Si Detectors.-Performance of MCz Si Material for p+nn+ and n+pp+ Si Sensor Design: Status and Development for HL-LHC: Status and Development for HL-LHC.- Development OF RADIATION HARD PIXEL DETECTORS FOR THE EUROPEAN XFEL.- T-CAD Simulation for the designing of detectors.- Development of Radiation Hard p+n Si Pixel Sensors for the European XFEL.- Analysis & Optimal Design of Radiation Hard p+n Si Pixel Detector for the Next generation Photon Science Experiments.- CapacitanceS in p+n silicon pixel sensors using 3-D TCAD simulation approach.-CHARACTERIZATION OF SI DETECTORS.- Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL.- Si Detector for HEP and Photon Science Experiments: How to Design Detectors by TCAD Simulation.- Appendices.
ISBN:
9783030195335
9783030195335
Category:
Condensed matter physics (liquid state & solid state physics)
Format:
Paperback
Publication Date:
25-09-2020
Language:
English
Publisher:
Springer International Publishing AG
Country of origin:
Switzerland
Dimensions (mm):
235x155mm
Weight:
0.45kg

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