This book describes the design, physics, and performance of high density (Ne>10 E11 cmE-3) plasma sources which have been extensively explored in low pressure (p-0.1-100mTorr) plasma processing, such as plasma etching and planarization, plasma enhanced chemical vapor deposition of thin films, sputtered deposition of metals and dielectrics, epitaxial growth of silicon and GaAS, and many other applications. In the last few years, substantial progress has been made in the design, research, and development of various types of plasma sources which were considered as candidates for the replacement of a 'traditional' 13.56 MHz capacitively coupled source. The physical principles, design features, plasma parameters and process operation characteristics of RF and microwave high density plasma sources suitable for use in low pressure (1-100 mTorr) large area (D=15-25) cm plasma processing are described. A comprehensive survey, and a detailed description and characterization of most advanced high density plasma sources used in plasma processing is presented. The book is balanced in that it gives both a theoretical treatment, and practical applications.
This book should be of considerable interest to scientists and engineers working on plasma source design, and process development. Contents Include: Helicon Plasma Sources Planar Inductive Sources Electrostatically-Shielded, Inductively- Coupled FR Plasma Sources Surface Wave Plasma Sources Microwave Plasma Disk Reacter Processing Machines Electron Cyclotron Resonance Plasma Sources.